Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate
In this study, we investigate the deposition of high-k dielectric materials, namely Al2O3 and HfO2, using atomic layer deposition for 4H-SiC metal-oxide-semiconductor applications.C-V measurements reveal that the HfO2/SiO2/Al2O3/4H-SiC structure exhibits lower interface state density (Dit) and a reduced number of fixed interface h22a4 transmission